2D cross-sectional doping profiling study of advanced CMOS devices.
In: Solid State Technology, Jg. 55 (2012-07-01), Heft 6, S. 29-35
Online
academicJournal
Zugriff:
The article reports on the two-dimensional (2D) cross-sectional doping profiling study of advances complementary metal-oxide semiconductor (CMOS) equipment in the U.S. It notes that the study has used electron holography (EH), a powerful method for 2D doping profiling. It mentions that EH has been used to investigate 2D cross-sectional activated dopant (carrier) profiles of the CMOS device.
Titel: |
2D cross-sectional doping profiling study of advanced CMOS devices.
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Autor/in / Beteiligte Person: | Qin, Shu ; Wang, Zhouguang ; Jeff Hu, Y. ; MoTeer, Allen |
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Zeitschrift: | Solid State Technology, Jg. 55 (2012-07-01), Heft 6, S. 29-35 |
Veröffentlichung: | 2012 |
Medientyp: | academicJournal |
ISSN: | 0038-111X (print) |
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