Radiation Degradation Individual Peculiarities of γ-irradiated Discrete Low Power Thyristors, Manufactured on Si and SiGe

Radiation degradation during γ-irradiation of discrete low-power thyristors, both control (Si) and investigated SiGe-fabricated, is a complex nonlinear process that is individual for each device. It is possible to distinguish three γ-irradiation ranges, in which the degradation of the average holding current for control and investigated thyristors proceeds in different ways. For Dγ ≈ 1·101…1·102 mSv there is a decrease in Ih(Dγ) for control Si devices, possibly connected with the "low-dose effect" for SiGe devices, there is an increase in the holding current, therefore, no "low dose effect". Range Dγ ≈ 1·102…1·104 mSv can be considered as an area of unstable operation of the control thyristors in the γ-radiation field, devices made with SiGe are sufficiently more stable. For Dγ ≥ 1·104 mSv there is an expected increase in Ih(Dγ) for Si thyristors, devices, manufactured with SiGe continue to be more stable. When Dγ ≈ 1·101…1·104 mSv use of SiGe makes it possible to increase the average interval radiation resistance of thyristors by approximately 7 %, and in the range of Dγ ≈ 1·104…1·106 mSv ≈ up to 12 %.