Study of Silicide Formation in Large Diameter Monocrystalline Silicon
In: East European Journal of Physics, 2024-06-01, Heft 2, S. 366-371
Online
academicJournal
Zugriff:
To study the formation of silicides, dislocation-free ingots of single-crystalline silicon with a diameter of 65÷110 mm, grown by the Czochralski method, were used. When studying such silicon samples using electron microscopy, small-angle scattering of CO2 laser radiation, three types of defects were identified: swirl defects, impurity micro inclusions and impurity clouds. It has been shown that silicide inclusions with sizes of 8-20 μm are formed in the near-surface layer of doped silicon, and they decrease linearly deeper into the crystal. The electrical parameters of semiconductor chromium silicide were determined: resistivity 1800 μOhm·cm, thermopower coefficient 180 μV/k, Hall constant 1.2·10-2 cm3/Kl, hole concentration 6·1019 cm-3, charge carrier mobility 18.6 cm2/V·s, band gap (0.29±0.02) еV.
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Study of Silicide Formation in Large Diameter Monocrystalline Silicon
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Autor/in / Beteiligte Person: | Mamadalimov, Abdugafur T. ; Makhmudkhodja Sh. Isaev ; Mamatkulov, Mukhammadsodik N. ; Kodirov, Sardor R. ; Abdurazzokov, Jamshidjon T. |
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Zeitschrift: | East European Journal of Physics, 2024-06-01, Heft 2, S. 366-371 |
Veröffentlichung: | V.N. Karazin Kharkiv National University Publishing, 2024 |
Medientyp: | academicJournal |
ISSN: | 2312-4334 (print) ; 2312-4539 (print) ; 7041-3584 (print) |
DOI: | 10.26565/2312-4334-2024-2-45 |
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