ВРЕМЯ ЖИЗНИ ДЫРОК В КРЕМНИЕВЫХ ДИОДАХ НА ОСНОВЕ N

The study of the parameters of the recombination centers created by various additives attracts the attention of research scientists. Transition elements such as nickel, tungsten, titanium, etc. are used in their manufacturing technology to improve the parameters of silicon devices and increase the percentage of availability. When the p-n junction is obtained, as a result of high-temperature operation, thermoacceptors are formed in the volume of silicon, and additives that create deep levels within it diffuse, as a result of which the lifetime is significantly reduced. Lifetime varies between 10-9÷10-5 seconds in p-n junction devices. The lifetime of nonmain carriers in thermally treated silicon can be increased by nickel. Therefore, nickel is widely used in the preparation of silicon p-n junctions. However, the mechanism of action of nickel has not been fully clarified and its recombination properties have been partially studied at temperatures above the operating limit of silicon devices (T=4900 K) in nickel-doped samples, recombination again occurs in the centers located in the middle of the band gap (ΔEt=0.54ev). [ABSTRACT FROM AUTHOR]